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650V 12A 680mΩ@10V, 12A 1 N-Channel TO-220F-3 MOSFETs ROHS
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[ Descriptions ]


K3569 Toshiba Semiconductor - 600V, 10A, N-Channel MOSFET - 2SK3569

2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Charact
K3569 Inchange - 600V, 10A, N-Channel MOSFET Transistor



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