Semiconductor Informations
| K3667 Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK3667 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3667 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characte |
| K360 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE - Knox Inc LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 Conserves battery life Unique manufacturing process Provides lowest reverse leakage currents Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE V- @ I- = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 |
| K3601GL Standard Bidirectional SIDAC - Littelfuse Teccor® brand Thyristors Standard Bidirectional SIDACs Kxxx1GL Series RoHS Schematic Symbol Applications Typical application circuit presented in Figure 10 of this data sheet (Typical Metal Halide Ignitor Circuit). Description The Multipulse™ SIDAC is a voltage switch used in MetalHalide lam |