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Search K3797 Datasheet (PDF)
Toshiba
2SK3797
Silicon N-Channel MOS Type / Trans MOSFET N-CH Si 600V 13A 3-Pin(3+Tab) TO-220SIS
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[ Descriptions ]
| K3797 Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK3797 2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3797 Unit: mm Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Chara |
Related Information
| K3700 MOSFET ( Transistor ) - 2SK3700 - Toshiba Semiconductor 2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK3700 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 |
| K3702 MOSFET ( Transistor ) - 2SK3702 - Sanyo Semicon Device Ordering number : ENN7502 2SK3702 N-Channel Silicon MOSFET 2SK3702 DC , DC Converter Applications Features Package Dimensions unit : mm 2063A [2SK3702] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.55 1 |
Related Part Number
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