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Toshiba

2SK3868(Q,M)

Mosfet N-ch 500V 5A TO220SIS

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[ Descriptions ]

K3868 Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK3868

2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3868 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Ch

Related Information

K3816 MOSFET ( Transistor ) - 2SK3816 - ON Semiconductor

Ordering number : EN8054A 2SK3816 N-Channel Power MOSFET 60V, 40A, 26mΩ, TO-262-3L, TO-263-2L http:, , onsemi.com Features ON-resistance RDS(on)1=20mΩ(typ.) Input capacitance Ciss=1780pF(typ.) 4V drive Speci cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source V

K383 Silicon N-Channel MOS FET - Hitachi

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