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[ Descriptions ]
| K3878 Toshiba - 900V, 9A, N-channel MOS Field Effect Transistor 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C |
| K3878 nELL - 9A, 900V, N-Channel Power MOSFET |
Related Information
| K3816 MOSFET ( Transistor ) - 2SK3816 - ON Semiconductor Ordering number : EN8054A 2SK3816 N-Channel Power MOSFET 60V, 40A, 26mΩ, TO-262-3L, TO-263-2L http:, , onsemi.com Features ON-resistance RDS(on)1=20mΩ(typ.) Input capacitance Ciss=1780pF(typ.) 4V drive Speci cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source V |
| K383 Silicon N-Channel MOS FET - Hitachi |
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