Semiconductor Informations
Search K3911 Datasheet (PDF)
Toshiba
2SK3911
TRANSISTOR 20 A, 600 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16C1B, SC-65, 3 PIN, FET General Purpose...
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| Component Stockers USA | 353 | 99.99 | Visit Site | ||
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| SHENGYU ELECTRONICS | 14,176 | 1.0949 | Visit Site | ||
| Anlinkda | 1,134 | 2.323 | Visit Site | ||
| Augswan | 14,176 | Visit Site | |||
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[ Descriptions ]
| K3911 Toshiba - Field Effect Transistor 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI) 2SK3911 Switching Regulator Applications Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 500 μA (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm A |
Related Information
| K390 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE - Knox Inc LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 Conserves battery life Unique manufacturing process Provides lowest reverse leakage currents Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE V- @ I- = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 |
| K3903 MOSFET ( Transistor ) - 2SK3903 - Toshiba Semiconductor 2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3903 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: Yfs = 7.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhanc |
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