Semiconductor Informations

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| K3919 NEC - MOSFET ( Transistor ) - 2SK3919 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC, DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3919 2SK3919-ZK PACKAGE TO-251 (MP-3 |
| K390 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE - Knox Inc LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 Conserves battery life Unique manufacturing process Provides lowest reverse leakage currents Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE V- @ I- = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 |
| K3903 MOSFET ( Transistor ) - 2SK3903 - Toshiba Semiconductor 2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3903 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: Yfs = 7.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhanc |