Semiconductor Informations
Search K4013 Datasheet (PDF)
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|---|---|---|---|---|---|
| Fmall Co., Limited | 9,880 | 12.4134 | Visit Site | ||
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[ Descriptions ]
| K4013 Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK4013 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK4013 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 640 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = |
Related Information
| K4013 MOSFET ( Transistor ) - 2SK4013 - Toshiba Semiconductor 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK4013 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 640 V) En |
| K4070 MOSFET ( Transistor ) - 2SK4070 - NEC DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4070 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEA |
Related Part Number
K4B2G1646Q-BCK0 | K4S561632D |K4B2G1646C | K4005-01MR |
K4S561632J | K40H603 |