Semiconductor Informations
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K40T1202 Infineon - IGBT TrenchStop 2 Generation Series ® nd IKW40N120T2 Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode C Best in class TO247 Short circuit withstand time 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® 2nd generation for 1200 V applications offers : - very tight parameter distri |
K40T120 Infineon - IGBT FDP52N20 , FDPF52N20T N-Channel MOSFET October 2007 UniFETTM FDP52N20 , FDPF52N20T N-Channel MOSFET 200V, 52A, 0.049Ω Features RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A Low gate charge ( Typ. 49nC) Low Crss ( Typ. 66pF) Fast switching 100% avalanche tested Improve dv, dt capability RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are |
K4013 MOSFET ( Transistor ) - 2SK4013 - Toshiba Semiconductor 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK4013 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 640 V) En |
K4070 MOSFET ( Transistor ) - 2SK4070 - NEC DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4070 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEA |