Semiconductor Informations
| K4107 Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK4107 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4107 ○ Switching Regulator Applications Low drain source ON resistance Low leakage current Enhancement mode : RDS (ON) = 0. 33 Ω (typ.) Unit: mm High forward transfer admittance : |Yfs| = 8.5 S (typ.) : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings ( |
| K4100LS MOSFET ( Transistor ) - 2SK4100LS - Sanyo Semicon Device Ordering number : ENA0778 2SK4100LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4100LS Features General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workabi |
| K4101LS MOSFET ( Transistor ) - 2SK4101LS - Sanyo Ordering number : ENA0745 2SK4101LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4101LS Features General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment worka |