Search K4110 Datasheet (PDF)

TE Connectivity / Raychem
ED-7-002-MK4-110V-60HZ
Ed-7-002-Mk4-110V-60Hz/ Box |Te Connectivity Raychem ED-7-002-MK4-110V-60HZ
Powered by Octopart





File Download: K4110.PDF


[ Descriptions ]


K4110 Toshiba - MOSFET ( Transistor ) - 2SK4110

2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4110 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Char


Related Information


K4100LS MOSFET ( Transistor ) - 2SK4100LS - Sanyo Semicon Device

Ordering number : ENA0778 2SK4100LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4100LS Features General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workabi
K4101LS MOSFET ( Transistor ) - 2SK4101LS - Sanyo

Ordering number : ENA0745 2SK4101LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4101LS Features General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment worka




Related Part Number

K4B2G1646Q-BCK0 | K4S561632D |

K4B2G1646C | K4005-01MR |

K4S561632J | K40H603 |

This website uses cookies for personalized recommendations and by continuing to browse you agree to our Privacy Policy.