K4111 Datasheet Search for PDF Files

Please enter the part number.

K4111 Toshiba - MOSFET ( Transistor ) - 2SK4111

2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4111 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25�

Related Information

K4107 MOSFET ( Transistor ) - 2SK4107 - Toshiba Semiconductor

2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4107 ○ Switching Regulator Applications Low drain source ON resistance Low leakage current Enhancement mode : RDS (ON) = 0. 33 Ω (typ.) Unit: mm High forward transfer admittance : |Yfs| = 8.5 S (typ.) : IDSS =

K4110 MOSFET ( Transistor ) - 2SK4110 - Toshiba

2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4110 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement m

Search Results for: K4111

Top 10 PDF Files:

Please enter the part number you wish to download in the search bar above.