Semiconductor Informations
| K4111 Toshiba - MOSFET ( Transistor ) - 2SK4111 2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4111 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25� |
| K4100LS MOSFET ( Transistor ) - 2SK4100LS - Sanyo Semicon Device Ordering number : ENA0778 2SK4100LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4100LS Features General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workabi |
| K4101LS MOSFET ( Transistor ) - 2SK4101LS - Sanyo Ordering number : ENA0745 2SK4101LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4101LS Features General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment worka |