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TK4A60DAR,S4X(S
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[ Descriptions ]

K4A60DA Toshiba - 600V, 3.5A, N-Channel MOSFET, TK4A60DA

TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DA Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: Yfs = 2.2 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Cha


Related Information

K4A60DA 600V, 3.5A, N-Channel MOSFET, TK4A60DA - Toshiba

TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DA Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: Yfs = 2.2 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement-



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