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Samsung
K4S561632D-TC75
4M X 16 Bit X 4 Banks Synchronous Dram Synchronous Dram, 16MX16, 5.4NS, Cmos, PDSO54
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[ Descriptions ]
| K4S561632D Samsung semiconductor - 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Aug. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 2002 K4S561632D Revision History Revision 0.0 (Jan., 2002) -First generation CMOS SDRAM Revision 0.1(Aug.,2002) - ICC6 of Low power is changed from 1.0 to 1.5 due to typo. |
Related Information
| K4S561632D 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL - Samsung semiconductor K4S561632D CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Aug. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 2002 K4S561632D Revision History Revision 0.0 (Jan., 2002) -First generat |
| K4S561632J 256Mb J-die SDRAM Specification - Samsung semiconductor K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUE |
Related Part Number
K4B2G1646Q-BCK0 | K4B2G1646C |K4005-01MR | K4S561632J |
K40H603 | K40T120 |