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Toshiba

TK5A50D(STA4,Q,M)

Trans MOSFET N-CH Si 500V 5A 3-Pin(3+Tab) TO-220SIS

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[ Descriptions ]

K5A50D Toshiba Semiconductor - TK5A50D

TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A50D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: Yfs = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

Related Information

K5A50D TK5A50D - Toshiba Semiconductor

TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A50D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: Yfs = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhanceme

K5A60D TK5A60D - Toshiba

TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A60D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: Yfs = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhanceme

Related Part Number

K5L5563CAA-D770 | K50H603 |

K50T60T | K50T60 |

K50H603 | K50T60T |

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