Semiconductor Informations
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| K5A50D Toshiba Semiconductor - TK5A50D TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A50D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: Yfs = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) |
| K5A50D TK5A50D - Toshiba Semiconductor TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A50D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: Yfs = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhanceme |
| K5A60D TK5A60D - Toshiba TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A60D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: Yfs = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhanceme |