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Toshiba

TK6A60DR,S4X(S

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K6A60DR Toshiba Semiconductor - N-Channel MOSFET ( TK6A60DR )

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K6A60D TK6A60D - Toshiba Semiconductor

TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A60D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mo

K6A60DR N-Channel MOSFET ( TK6A60DR ) - Toshiba Semiconductor

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