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K6A60D TK6A60D - Toshiba Semiconductor

TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A60D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mo
K6A65D TK6A65D - Toshiba Semiconductor

TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A65D Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: Yfs =4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhanceme

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