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[ Descriptions ]
| K6A65D Toshiba Semiconductor - TK6A65D TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A65D Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: Yfs =4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) |
Related Information
| K6A60D TK6A60D - Toshiba Semiconductor TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A60D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mo |
| K6A60DR N-Channel MOSFET ( TK6A60DR ) - Toshiba Semiconductor |
Related Part Number
K6T4008U1C-GB10 | K6X4008T1F-GQ70 |K6X4008C1F-BF55 | K6A60DR |
K6X4008C1F | K6A650 |