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| K6T4008U1C-GB10 Samsung semiconductor - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85, 100ns → 70, 85, 100ns - DC Characteristics change ICC : 5mA at read, write → 4mA at read ICC1 : 3mA → 4mA ICC2 : 35mA → 30mA ISB : 0.5mA → 0.3mA ISB1 : 10 A → 15 A for comme |
Related Information
| K6T4008U1C-GB10 512Kx8 bit Low Power and Low Voltage CMOS Static RAM - Samsung semiconductor K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85, 100ns → 70, 85, 100ns - DC Characteristics change ICC : 5mA at read, write → 4mA |
Related Part Number
K6X4008T1F-GQ70 | K6X4008C1F-BF55 |K6A60DR | K6X4008C1F |
K6A65D | K6A650 |