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Toshiba
TK80E08K3(S1,Q,D)
Silicon N Channel MOSFET
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[ Descriptions ]

K80E08K3 Toshiba - TK80E08K3

Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOS TK80E08K3 E-Bike, UPS, Inverter Unit: mm Low drain source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.5 mΩ (typ.) : |Yfs| = 135 S (typ.) : IDSS = 10 A (max) (VDS = 75 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (T


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TK80E07NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOS -H) TK80E07NE E-Bike, UPS, Inverter Unit: mm Note : This product is designed for E-Bike , UPS , Inverter in China , India market. - Low drain source on-resistance : RDS(ON) = 6.9 mΩ (typ.) - Low leakage current
K80E08K3 TK80E08K3 - Toshiba

Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOS TK80E08K3 E-Bike, UPS, Inverter Unit: mm Low drain source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.5 mΩ (typ.) : |Yfs| = 135 S (typ.) : ID



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