Search K8A50D Datasheet (PDF)

Toshiba
TK8A50D(STA4,Q,M)
Halbleiterbauelement, Transistor, Pwr-Mo; |Toshiba TK8A50D(STA4, Q, M)
DistributorStock110100Link
Verical5Visit Site
TME2711.971.140.87Visit Site
Mouser1,1402.371.161.07Visit Site
DigiKey432.371.5191.0321Visit Site
Microchip USA1,985Visit Site
Win Source30,001Visit Site
Worldway Electronics27,2470.56470.554Visit Site
Powered by Octopart





File Download: K8A50D.PDF


[ Descriptions ]


K8A50D Toshiba - TK8A50D

TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A50D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


Related Information


K8A1215EBC 512Mb C-die NOR FLASH - Samsung semiconductor

Rev. 1.1, Sep. 2010 K8A12(13)15ET(B, Z)C 512Mb C-die NOR FLASH (32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pu
K8A1215ETC 512Mb C-die NOR FLASH - Samsung semiconductor

Rev. 1.1, Sep. 2010 K8A12(13)15ET(B, Z)C 512Mb C-die NOR FLASH (32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pu




Related Part Number

K8A65D | K827 |

K8A500 | K8VM800 |

K80E08K3 | K8A60DA |

This website uses cookies for personalized recommendations and by continuing to browse you agree to our Privacy Policy.