Semiconductor Informations

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| K8A55DA Toshiba - TK8A55DA TK8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A55DA Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A Absolute Maximum Ratings (Ta = 25°C) Characteristics S Drain-source voltage Gate-source voltage DC (Note Drain current 1) ymbol VDSS VGSS ID IDP |
| K8A1215EBC 512Mb C-die NOR FLASH - Samsung semiconductor Rev. 1.1, Sep. 2010 K8A12(13)15ET(B, Z)C 512Mb C-die NOR FLASH (32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pu |
| K8A1215ETC 512Mb C-die NOR FLASH - Samsung semiconductor Rev. 1.1, Sep. 2010 K8A12(13)15ET(B, Z)C 512Mb C-die NOR FLASH (32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pu |