Semiconductor Informations
Search K8A60DA Datasheet (PDF)
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Win Source | 42,437 | Visit Site | |||
| XINVRY | 28,630 | 6.93 | Visit Site | ||
| Anlinkda | 62,015 | 0.173 | Visit Site | ||
| RC Electronics | 55,716 | 0.13 | Visit Site | ||
| Best Source | 18,405 | 1.7663 | Visit Site | ||
| SHENGYU ELECTRONICS | 16,234 | 0.2067 | Visit Site | ||
Powered by Octopart | |||||
File Download: K8A60DA.PDF
[ Descriptions ]
| K8A60DA Toshiba Semiconductor - TK8A60DA TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A60DA Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance: Yfs = 4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25° |
Related Information
| K8A1215EBC 512Mb C-die NOR FLASH - Samsung semiconductor Rev. 1.1, Sep. 2010 K8A12(13)15ET(B, Z)C 512Mb C-die NOR FLASH (32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pu |
| K8A1215ETC 512Mb C-die NOR FLASH - Samsung semiconductor Rev. 1.1, Sep. 2010 K8A12(13)15ET(B, Z)C 512Mb C-die NOR FLASH (32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pu |
Related Part Number
K8A65D | K827 |K8A500 | K8VM800 |
K80E08K3 | K8A50D |