Semiconductor Informations
Search K8A65D Datasheet (PDF)
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[ Descriptions ]
| K8A65D Toshiba Semiconductor - TK8A65D TK8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A65D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C |
Related Information
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| K8A1215ETC 512Mb C-die NOR FLASH - Samsung semiconductor Rev. 1.1, Sep. 2010 K8A12(13)15ET(B, Z)C 512Mb C-die NOR FLASH (32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pu |
Related Part Number
K827 | K8A500 |K8VM800 | K80E08K3 |
K8A60DA | K8A50D |