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KDR701S KEC(Korea Electronics) - SCHOTTKY BARRIER TYPE DIODE(FOR HIGH FREQUENCY RECTIFICATION)

SEMICONDUCTOR TECHNICAL DATA For High frequency rectification KDR701S SCHOTTKY BARRIER TYPE DIODE FEATURES Low Forward Voltage : VF max=0.55V. IR=700mA recification possible. L E B L DIM A 2 MILLIMETERS _ 0.20 2.93 + 1.30+0.20, -0.15 1.30 MAX 0.45+0.15, -0.05 2.40+0.30, -0.20 1.90 0.95 0.13+0.10, -0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20, -0.10 7 3 D B C D E G H J K A G H 1 MAXIMUM R

KDR701S KEC - SCHOTTKY BARRIER TYPE DIODE

SEMICONDUCTOR TECHNICAL DATA For High frequency rectification FEATURES Low Forward Voltage : VF max=0.55V. IR=700mA recification possible. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-repetitive peak surge current Junction Temperature Storage Temperature SYMBOL VRRM VR IO IFSM Tj Tstg RATING 30 30 0.7 5 125 -55 125 UNIT V V

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KDR105 SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION) - KEC(Korea Electronics)

SEMICONDUCTOR TECHNICAL DATA High frequency rectification (Switching regulators, converters, choppers) E M B KDR105 SCHOTTKY BARRIER TYPE DIODE M D 3 FEATURES A Low Forward Voltage : VF max=0.55V. Low Leakage Current : IR max=10 A. 2 J 1 C CHARACTERISTIC Repetitive Peak Reverse Voltage Rever

KDR105S SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION) - KEC(Korea Electronics)

SEMICONDUCTOR TECHNICAL DATA High frequency rectification (Switching regulators, converters, choppers) L KDR105S SCHOTTKY BARRIER TYPE DIODE E B L FEATURES Low Forward Voltage : VF max=0.55V. A G DIM A 2 H D MILLIMETERS _ 0.20 2.93 + 1.30+0.20, -0.15 1.30 MAX 0.45+0.15, -0.05 2.40+0.30, -0.20

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