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VBsemi
KF6N60D-VB
650V, 5A, Rds(on), 950M¦¸@10V, 30VGS(¡ÀV), 3.5VTH(V) N£¨fet£©, Sj_multi-epi, TO252, Nfet
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[ Descriptions ]


KF6N60D KEC - N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 600V, ID= 5A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC 1 2 3 KF6N60D, I N CHANNEL MOS FIE


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