Semiconductor Informations

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| LB124E Dc Components - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR DC COMPONENTS CO., LTD. R LB124E DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications . TO-220AB .405(10.28) .380(9.66) .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .295(7.49) .220(5.58) Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maxim |
| LB100-S Current Transducer LB 100-S/SP3 - LEM Current Transducer LB 100-S, SP3 For the electronic measurement of currents : DC, AC, pulsed..., with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit). IPN = 100 A Electrical data IPN IP RM Primary nominal r.m.s. current Primary current |
| LB1000-SI Current Transducer LB 1000-SI/SP2 - LEM |