Semiconductor Informations
| LM358P STMicroelectronics - LOW POWER DUAL OPERATIONAL AMPLIFIERS LM158, LM258, LM358 Low-power dual operational amplifiers Datasheet - production data Features Frequency compensation implemented internally Large DC voltage gain: 100 dB Wide bandwidth (unity gain): 1.1 MH- (temperature compensated) Very low supply current per channel essentially independent of supply voltage Low input bias current: 20 nA (temperature compensated) Low input offset voltage: 2 m |
| LM358PT ROHM Semiconductor - (LM358xx) SILICON MONNOLITHIC INTEGRATED CIRCUIT Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delive |
| LM30 Diode (spec sheet) - American Microsemiconductor |
| LM30-3015PC Sensors - Greegoo 6-1 Sensors Proximity sensor Type and meanings LM 18 - 30 05 N A 1 2 3 4 5 6 7 1: Sensor category LM: Inductive type CM: Capacitive type SM: Hall type AM: Safety explosion-proof type XM: Mimic linear type 2: Outward appearance code : Cylinder type F: Angular column type and plane installation t |