Semiconductor Informations

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| M25P16 STMicroelectronics - 16 Mbit/ Low Voltage/ Serial Flash Memory With 50 MHz SPI Bus Interface M25P16 16 Mbit, Low Voltage, Serial Flash Memory With 50 MH- SPI Bus Interface FEATURES SUMMARY - - - - - - - - - - - 16Mbit of Flash Memory Page Program (up to 256 Bytes) in 1.4ms (typical) Sector Erase (512 Kbit) Bulk Erase (16Mbit) 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 50MH- Clock Rate (maximum) Deep Power-down Mode 1 A (typical) Electronic Signatures JEDEC St |
| M25P16 Numonyx - Flash Memory Numonyx® Fort ™ Serial Flash Memory M25P16 16 Mbit, serial Flash memory, 75 MH- SPI bus interface Features 16 Mbit of Flash memory Page Program (up to 256 bytes) in 0.64 ms (typical) Sector Erase (512 Kbit) in 0.6 s (typical) Bulk Erase (16 Mbit) in 13 s (typical) 2.7 V to 3.6 V single supply voltage SPI bus compatible serial interface 75 MH- Clock rate (maximum) Deep Power-down mode 1 |
| M25JZ51 SM25JZ51 - Toshiba Semiconductor SM25GZ51,SM25JZ51 TOSHIBA BI DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE SM25GZ51,SM25JZ51 AC POWER CONTROL APPLICATIONS l Repetitive Peak Off State Voltage : VDRM = 400, 600V l R.M.S On State Current l High Commutating (dv , dt) l Isolation Voltage Unit: mm : IT (RMS) = 25A : (dv , dt) c |
| M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface - STMicroelectronics M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MH- Serial SPI Bus Interface PRELIMINARY DATA s s s s s s s s s s s s s 1 Mbit PAGED Flash Memory 128 BYTE PAGE PROGRAM IN 3 ms TYPICAL 256 Kbit SECTOR ERASE IN 1 s TYPICAL BULK ERASE IN 2 s TYPICAL SINGLE 2.7 V to 3.6 V SUPPLY VOLTAGE SPI BUS CO |