Semiconductor Informations
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M25P40 STMicroelectronics - 4 Mbit/ Low Voltage/ Serial Flash Memory With 25 MHz SPI Bus Interface M25P40 4 Mbit, Low Voltage, Serial Flash Memory With 25 MH- SPI Bus Interface FEATURES SUMMARY s 4 Mbit of Flash Memory s Figure 1. Packages Page Program (up to 256 Bytes) in 1.5ms (typical) Sector Erase (512 Kbit) in 2 s (typical) Bulk Erase (4 Mbit) in 5 s (typical) 2.7 V to 3.6 V Single Supply Voltage SPI Bus Compatible Serial Interface 25 MH- Clock Rate (maximum) Deep Power-down Mode 1 A (t |
M25P40 Micron - 3V 4Mb Serial Flash Embedded Memory M25P40 Serial Flash Embedded Memory Features M25P40 3V 4Mb Serial Flash Embedded Memory Features SPI bus-compatible serial interface 4Mb Flash memory 75 MH- clock frequency (maximum) 2.3V to 3.6V single supply voltage Page program (up to 256 bytes) in 0.8ms (TYP) Erase capability Sector erase: 512Kb in 0.6 s (TYP) Bulk erase: 4Mb in 4.5 s (TYP) Write protection Hardware write protection |
M25JZ51 SM25JZ51 - Toshiba Semiconductor SM25GZ51,SM25JZ51 TOSHIBA BI DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE SM25GZ51,SM25JZ51 AC POWER CONTROL APPLICATIONS l Repetitive Peak Off State Voltage : VDRM = 400, 600V l R.M.S On State Current l High Commutating (dv , dt) l Isolation Voltage Unit: mm : IT (RMS) = 25A : (dv , dt) c |
M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface - STMicroelectronics M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MH- Serial SPI Bus Interface PRELIMINARY DATA s s s s s s s s s s s s s 1 Mbit PAGED Flash Memory 128 BYTE PAGE PROGRAM IN 3 ms TYPICAL 256 Kbit SECTOR ERASE IN 1 s TYPICAL BULK ERASE IN 2 s TYPICAL SINGLE 2.7 V to 3.6 V SUPPLY VOLTAGE SPI BUS CO |