Semiconductor Informations
Search M28F101 Datasheet (PDF)
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File Download: M28F101.PDF
[ Descriptions ]
| M28F101 STMicroelectronics - 1 Mb FLASH MEMORY M28F101 1 Mb (128K x 8, Chip Erase) FLASH MEMORY 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10 s typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION Stand-by Current: 100 A max 10,000 ERASE, PROGRAM CYCLES INTEGRATED ERASE, PROGRAM-STOP TIMER OTP COMPATIBLE PACKAGES and PINOUTS ELECTRONIC SIGNATURE Manufacturer Code: 20h Device Cod |
Related Information
| M28010-W 1 Mbit (128K x 8) Parallel EEPROM - ST Microelectronics |
| M28256 256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection - STMicroelectronics M28256 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection PRELIMINARY DATA FAST ACCESS TIME: 90ns at 5V 120ns at 3V SINGLE SUPPLY VOLTAGE: 5V ± 10% for M28256 2.7V to 3.6V for M28256-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE: 64 Bytes Page Write Operation Byte or Page Write Cy |
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