Semiconductor Informations

File Download: MDD142-08N1.PDF
| MDD142-08N1 IXYS Corporation - HIgh Power Diode Modules MDD 142 High Power Diode Modules IFRMS = 2x 300 A IFAVM = 2x 165 A VRRM = 800-1800 V VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Type MDD 142-08N1 MDD 142-12N1 MDD 142-14N1 MDD 142-16N1 MDD 142-18N1 312 2 1 3 Symbol IFRMS I FAVM IFSM i2dt TVJ TVJM Tstg V ISOL Md Weight Symbol IR VF VT0 r T QS IRM RthJC RthJK dS dA a Test Conditions TVJ = TVJM T C = 100°C; 180° |
| MDD06N100 N-Channel MOSFET - MagnaChip MDD06N100 Single N-Channel Trench MOSFET 60V MDD06N100 Single N-channel Trench MOSFET 60V, 50A, 10mΩ ㄹ General Description The MDD06N100 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD0 |
| MDD1051 Single N-channel Trench MOSFET - MagnaChip MDD1051 Single N-Channel Trench MOSFET 150V MDD1051 Single N-channel Trench MOSFET 150V, 28A, 46mΩ ㄹ General Description The MDD1051 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1051 |