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ME12P04
P—channelchannel, -40V, -65A, Rds(on), 10MΩ@10V, 13MΩ@4.5V, 20VGS(±V)；-1.6VTH(V) ENCAPSULATION：TO252
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[ Descriptions ]

ME12P04 Matsuki - P-Channel 40-V (D-S) MOSFET

ME12P04, ME12P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME12P04 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook com
ME12P04-G Matsuki - P-Channel 40-V (D-S) MOSFET

ME12P04, ME12P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME12P04 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook com


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