Semiconductor Informations
File Download: ME12P04.PDF
| ME12P04 Matsuki - P-Channel 40-V (D-S) MOSFET ME12P04, ME12P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME12P04 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook com |
| ME12P04-G Matsuki - P-Channel 40-V (D-S) MOSFET ME12P04, ME12P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME12P04 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook com |
| ME100603 Diode ( Rectifier ) - American Microsemiconductor |
| ME101203 Diode ( Rectifier ) - American Microsemiconductor |
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