Semiconductor Informations
| ME60N03A Matsuki - 25V N-Channel Enhancement Mode MOSFET 25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m ME60N03A FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC, DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25 Pa |
| ME60N03AS Matsuki - 25V N-Channel Enhancement Mode MOSFET ME60N03AS 25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A 9mΩ RDS(ON), Vgs@ 5V,Ids@15A 18mΩ APPLICATIONS ● Motherboard (V-Core) ● DC, DC Converter ● Load Switch ● LCD Display inverter ● IPC FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC, DC converters and motor drivers Fully character |
| ME600415 Diode ( Rectifier ) - American Microsemiconductor |
| ME600815 Diode ( Rectifier ) - American Microsemiconductor |