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ME9435-VB
30V 4.1A 33mΩ@10V, 5.8A 1.3W 2V@250uA P Channel 16nC@10V -55℃~+150℃@(Tj) SO-8 MOSFETs ROHS
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[ Descriptions ]

ME9435A Matsuki - 30V P-Channel Enhancement Mode MOSFET

ME9435A 30V P-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME9435A is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power manag
ME9435 Matsuki - 30V P-Channel Enhancement Mode MOSFET

ME9435 30V P-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME9435 is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power managem


Related Information

ME9435 30V P-Channel Enhancement Mode MOSFET - Matsuki

ME9435 30V P-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME9435 is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par
ME9435A 30V P-Channel Enhancement Mode MOSFET - Matsuki

ME9435A 30V P-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME9435A is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are p



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