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[ Descriptions ]
| MIP2E4DMY Panasonic Semiconductor - Silicon MOS type integrated circuit (IPD) MIP2E4DMY MOS I 2.8±0.2 1.5±0.2 Unit : mm 10.5±0.5 9.5±0.2 8.0±0.2 6.7±0.3 4.5±0.2 1.4±0.1 I 15.4±0.3 φ 3.7±0.2 I Ta = 25°C ± 3°C 13.5±0.5 4.2±0.3 Solder Dip 1.4±0.1 (9.3) 2.5±0.2 0.6 +0.1 0.2 0.8±0.1 VD VC ID IDP IC Tch Tstg 700 10 1.72 2.4 0.1 150 55 ∼ +150 V V A A A °C °C 2.54±0.3 5.08±0.5 1 2 3 1 : Control 2 : Source 3 : Drain TO-220-A1 Pa |
Related Information
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