Semiconductor Informations
| MIP3E30MP Panasonic - Silicon MOS type integrated circuit (IPD) MIP3E30MP MOS - (MIP2ExD 50% ) 8 9.4±0.3 Unit : mm +0 0.25 -0.05 .10 7 5 7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2 - 1 2 3 4 2.54±0.25 - VD VC ID IDP IC Tch Tstg 700 8 0.88 1.7 0.1 150 55 ∼ +150 V V A A A °C °C 0.5±0.1 1.2±0.25 (2,3,7PIN) 1 : Source 2 : Source 3 : Source (1,4,5,8PIN) 4 : Control 5 : Drain 7 : Source 8 : Source DIP8-A1(CF) Package 0.4±0.1 0.6±0.1 : MIP3E3 |
| MIP0040MS Silicon MOSFET type Integrated Circuit - Panasonic MIP0040MS Type Application Structure Equivalent Circuit Out Line Silicon MOSFET type Integrated Circuit For Switching Power Supply Control CMOS type Figure 8 DIP7-A1 Marking A. ABSOLUTE MAXIMUM RATINGS (Ta= 25°C±3°C) No. Item Symbol 1 VIN Voltage 2 VCC Voltage 3 VDD Voltage 4 OUT Voltag |
| MIP0122SY (MIP0xxxSY) Second Generation Three Terminal Package Intelligent Power Device Series - Panasonic w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c |