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| MJ1001 Motorola Inc - Medium-Power Complementary Silicon Transistors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ1000, D Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. High DC Current Gain hFE = 6000 (Typ) @ IC = 3.0 Adc Monolithic Construction with Built in Base Emitter Shunt Resistors MJ1000 MJ1001* *Motorola Preferred Device NPN 10 AMPERE DARLINGT |
| MJ10012 Mospec Semiconductor - POWER TRANSISTORS(10A/400V/175W) A A A A |
Related Information
| MJ1000 Medium-Power Complementary Silicon Transistors - Motorola Inc MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ1000, D Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. High DC Current Gain hFE = 6000 (Typ) @ IC = 3.0 Adc Monolithic Construction with Built |
| MJ1000 (MJ1000 / MJ1001) SILICON POWER TRANSISTOR - SavantIC SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ1000, 1001 DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900, 901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications PINNING(s |
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