Search MJ1101 Datasheet (PDF)

onsemi
MJ11012G
30 A, 60 V NPN Darlington Bipolar Power Transistor
DistributorStock110100Link
Avnet200Visit Site
Master Electronics1704.85Visit Site
Onlinecomponents.com1704.85Visit Site
Rochester Electronics1,1874.41Visit Site
Verical2505.5125Visit Site
Flip Electronics200Visit Site
Mouser1549.446.644.92Visit Site
Powered by Octopart





File Download: MJ1101.PDF


[ Descriptions ]


MJ11011 Mospec Semiconductor - POWER TRANSISTORS(30A/60-120V/200W)

A A A
MJ11011 Wing Shing Computer Components - PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

MJ11011 PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature Symbol VCBO VCEO IC PC Tj Tstg Rating -60 -60 -30 200 200 -50~150 Unit V V A W °C °C


Related Information


MJ1000 Medium-Power Complementary Silicon Transistors - Motorola Inc

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ1000, D Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. High DC Current Gain hFE = 6000 (Typ) @ IC = 3.0 Adc Monolithic Construction with Built
MJ1000 (MJ1000 / MJ1001) SILICON POWER TRANSISTOR - SavantIC

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ1000, 1001 DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900, 901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications PINNING(s




Related Part Number

MJ1001 | MJE13007F |

MJ900 | MJE13007 |

MJE230 | MJE13001 |

This website uses cookies for personalized recommendations and by continuing to browse you agree to our Privacy Policy.