Semiconductor Informations
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| MJE13003 Wing Shing Computer Components - NPN SILICON TRANSISTOR MJE13003 FEATURES Power dissipation PCM : 1.25 NPN SILICON TRANSISTOR TO 126 W Tamb=25 1.BASE 2.COLLECTOR 3.EMITTER Collector current 1.5 A ICM : Collector-base voltage V(BR)CBO : 700 V 123 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-of |
| MJE13003 Motorola Semiconductors - 1.5 AMPERE, 400 VOLTS, 40 WATTS, NPN SILICON POWER TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13002, D Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid, Relay |
| MJE105 5 Ampere Power Transistor - Motorola Semiconductors |
| MJE105 5 Ampere Power Transistor - ETC |
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