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MJE3055TG
Bipolar (BJT) Single Transistor, NPN, 60 V, 10 A, 75 W, TO-220, Through Hole
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Avnet | 2,400 | Visit Site | |||
| Newark | 1,460 | 1.21 | Visit Site | ||
| Master Electronics | 700 | Visit Site | |||
| Onlinecomponents.com | 700 | Visit Site | |||
| Rochester Electronics | 363 | Visit Site | |||
| Verical | 20 | Visit Site | |||
| Arrow Electronics | 147 | 0.6308 | Visit Site | ||
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File Download: MJE3055.PDF
[ Descriptions ]
| MJE3055 Fairchild - General Purpose and Switching Applications MJE3055T MJE3055T General Purpose and Switching Applications DC Current Gain Specified to IC =10A High Current Gain-Bandwidth Product : fT = 2MH- (Min.) 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector -Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
| MJE3055 Samsung - NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS) |
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Related Part Number
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