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MMZ09312BT1 Freescale Semiconductor - Heterojunction Bipolar Transistor

Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev. 1, 2, 2012 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency, Linearity Amplifier The MMZ09312B is a 2 -- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applicatio



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MMZ09312BT1 Heterojunction Bipolar Transistor - Freescale Semiconductor

Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev. 1, 2, 2012 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency, Linearity Amplifier The MMZ09312B is a 2 -- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier