Semiconductor Informations
Search MRF175GV Datasheet (PDF)
Datasheet| Distributor | Stock | 1 | Link | ||
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| Richardson RFPD | 310 | Visit Site | |||
| Microchip USA | 1,260 | Visit Site | |||
| Esaler Electronic | 10 | 242.339 | Visit Site | ||
| Worldway Electronics | 23,444 | Visit Site | |||
| SHENGYU ELECTRONICS | 8,267 | 116.2312 | Visit Site | ||
| Chipsmall Limited | 500 | 382.5 | Visit Site | ||
| Suntronic | 5,311 | Visit Site | |||
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File Download: MRF175GV.PDF
[ Descriptions ]
| MRF175GV Tyco Electronics - 65V, 26A, N-CHANNEL MOS BROADBAND RF POWER FETs (MRF175GU) SEMICONDUCTOR TECHNICAL DATA Order this document by MRF175GU, D The RF MOSFET Line RF Power Field-Effect Transistors N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel f |
| MRF175GV New Jersey Semiconductor - 26A, 65V, RF MOSFET ( N-channel ) |
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| MRF136 N-CHANNEL MOS BROADBAND RF POWER FET - Tyco Electronics SEMICONDUCTOR TECHNICAL DATA Order this document by MRF136, D The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large signal amplifier and oscillator applications up to 400 MH- range, in single ended configuration. Guaranteed 28 |
| MRF136 N-CHANNEL MOS BROADBAND RF POWER FETs - Motorola Semiconductors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF136, D The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large signal amplifier and oscillator applications up to 400 MH- range, in either single ended or push pull |
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