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Search MTY30N50E Datasheet (PDF)
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| Rochester Electronics | 7,797 | Visit Site | |||
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| IC Components Ltd. | 14,088 | 5.21 | Visit Site | ||
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| Fmall Co., Limited | 47,050 | 4.092 | Visit Site | ||
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File Download: MTY30N50E.PDF
[ Descriptions ]
| MTY30N50E Motorola Semiconductors - TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY30N50E, D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY30N50E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain to source diode |
Related Information
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| MTY10N100E TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM - Motorola Semiconductors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY10N100E, D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY10N100E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide |
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