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NCE4953

2.5W 20V 1.6V 1individualPChannel 30V 55mΩ(mΩ) @VGS=10V, 25℃, 90(mΩ) @VGS=4.5V, 25℃, 5.1A 520pF@15V SOP-8 SMD mount

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[ Descriptions ]

NCE4953A NCE Power Semiconductor - NCE P-Channel Enhancement Mode Power MOSFET

http:, , www.ncepower.com Pb Free Product NCE4953A NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE4953A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.3A RDS(ON) < 100mΩ @ VGS=-4.5V RDS(

NCE4953 NCE Power Semiconductor - NCE P-Channel Enhancement Mode Power MOSFET

http:, , www.ncepower.com Pb Free Product NCE4953 NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON)

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http:, , www.ncepower.com Pb Free Product NCE0102Z NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0102Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. D G General Features ● VDS = 1

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http:, , www.ncepower.com Pb Free Product NCE0106R NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,I

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