Semiconductor Informations
| NJW21194G ON Semiconductor - (NJW21193G / NJW21194G) Silicon Power Transistors NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features Total Harmonic Distortion Characterized High DC Current Gain Excellent Gain Linearity High SOA These Devices are Pb Free and are RoHS Compliant MAXIMUM RA |
| NJW0281G Silicon NPN Power Transistor - Inchange Semiconductor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification NJW0281G DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0302G APPLICATIONS ·Designed for high fidelity audio amplifier and other linear |
| NJW0281G (NJW0281G / NJW0302G) Complementary NPN-PNP Power Bipolar Transistors - ON Semiconductor NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high f |