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P0603BDG-VB
30V, 100A, Rds(on), 2M¦¸@10V, 3M¦¸@4.5V, 20VGS(¡ÀV), 1.9VTH(V) , TO252 Nmosfet
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| LCSC | 30 | 0.5107 | Visit Site | ||
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File Download: P0603BDG.PDF
[ Descriptions ]
| P0603BDG NIKO-SEM - N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0603BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 30 RDS(ON) 6.5m ID 75A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanc |
| P0603BDG UNIKC - N-Channel Enhancement Mode MOSFET P0603BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6.5mΩ @VGS = 10V ID 68A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 68 43 180 Avalanche Current IA |
Related Information
| P0603BDG N-Channel Enhancement Mode MOSFET - UNIKC P0603BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6.5mΩ @VGS = 10V ID 68A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous D |
| P0603BDG N-Channel Logic Level Enhancement Mode Field Effect Transistor - NIKO-SEM NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0603BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 30 RDS(ON) 6.5m ID 75A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS Gate-Source Voltage |
Related Part Number
P0903BDG | P0903BDG |P0903BDL | P005RF11 |
P0550AD | P0903BDG |