Semiconductor Informations

File Download: P10N60.PDF
| P10N60 Infineon Technologies Corporation - SGP10N60 SGP10N60 SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability G E Type |
| P100 PASSIVATED ASSEMBLED CIRCUIT ELEMENTS - International Rectifier Bulletin I27125 rev. A 04, 99 P100 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical d |
| P1000A Silicon Rectifiers - Diotec Semiconductor P 1000 A ... P 1000 M Silicon Rectifiers Silizium Gleichrichter Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgeh use Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Geh usematerial UL94V-0 klassifiziert D |