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| P2904BD NIKO-SEM - N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2904BD TO-252 Halogen-Free & Lead- Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 29mΩ ID 25A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Av |
| P2904BD UNIKC - N-Channel Enhancement Mode MOSFET P2904BD N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 29mΩ @VGS = 10V ID 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA= 25 °C TA= 70 °C ID IDM 25 20 75 Avalanche Cur |
Related Information
| P2904BD N-Channel Enhancement Mode MOSFET - UNIKC P2904BD N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 29mΩ @VGS = 10V ID 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Co |
| P2904BD N-Channel Logic Level Enhancement Mode Field Effect Transistor - NIKO-SEM NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2904BD TO-252 Halogen-Free & Lead- Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 29mΩ ID 25A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS Drain-S |
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