Semiconductor Informations
| P6NK60ZFP STMicroelectronics - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 STP6NK60ZFP - STP6NK60Z N-channel 600 V - 1 Ω - 6 A - TO-220, TO-220FP, D2PAK, I2PAK Zener-Protected SuperMESH™ Power MOSFET Features Type STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z - - - VDSS 600 V 600 V 600 V 600 V RDS(on) < 1.2 Ω < 1.2 Ω < 1.2 Ω < 1.2 Ω ID 6A 6A 6A 6A PW 110 W 110 W 30 W 110 W TO-220 1 2 3 3 1 D²PAK Extremely high dv, dt capability 1 |
| P6N60FI STP6N60FI - ST Microelectronics ( t : ) STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI s s s s s VDSS 600 V R DS(on) < 1.2 Ω ID 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION 3 1 2 APPLI |
| P6NA60FI STP6NA60FI - ST Microelectronics STP6NA60 STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP6NA60 STP6NA60FI s s s s s s s V DSS 600 V 600 V R DS( on) < 1.2 Ω < 1.2 Ω ID 6.5 A 3.9 A TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC |
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