Semiconductor Informations
Search P6NK60ZFP Datasheet (PDF)
STMicroelectronics
STP6NK60ZFP
N-channel 600 V - 1 Ohm - 6 A - TO-220 Zener-Protected SuperMESH(TM) Power MOSFET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Newark | 71,044 | 3.47 | Visit Site | ||
| Arrow Electronics | 1,000 | 3.1321 | Visit Site | ||
| Verical | 2,000 | Visit Site | |||
| TME | 203 | 2.49 | Visit Site | ||
| DigiKey | 985 | 3.77 | Visit Site | ||
| Microchip USA | 114 | Visit Site | |||
| Win Source | 71,046 | Visit Site | |||
Powered by Octopart | |||||
[ Descriptions ]
| P6NK60ZFP STMicroelectronics - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 STP6NK60ZFP - STP6NK60Z N-channel 600 V - 1 Ω - 6 A - TO-220, TO-220FP, D2PAK, I2PAK Zener-Protected SuperMESH™ Power MOSFET Features Type STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z - - - VDSS 600 V 600 V 600 V 600 V RDS(on) < 1.2 Ω < 1.2 Ω < 1.2 Ω < 1.2 Ω ID 6A 6A 6A 6A PW 110 W 110 W 30 W 110 W TO-220 1 2 3 3 1 D²PAK Extremely high dv, dt capability 1 |
Related Information
| P6N60FI STP6N60FI - ST Microelectronics ( t : ) STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI s s s s s VDSS 600 V R DS(on) < 1.2 Ω ID 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION 3 1 2 APPLI |
| P6NA60 STP6NA60 - STMicroelectronics STP6NA60 STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP6NA60 STP6NA60FI s s s s s s s VDSS 600 V 600 V R DS(on) < 1.2 Ω < 1.2 Ω ID 6.5 A 3.9 A TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC |
Related Part Number
P6NK90Z | P6KE10CA |P6KE24A | P6SMBJ85A |
P6KE180CA | P6KE |